features ? compact 4-pin package (2.4 mm maximum standoff height) current transfer ratio: in selected groups HMA121A: 100-300% hma121b 50-150% hma121c: 100-200% available in tape and reel quantities of 500 and 2500. applicable to infrared ray reflow (230c max, 30 seconds.) u.l. (file # e90700), csa (82858) and bsi (8611/8612) certified vde certified (option v) creepage 5 mm, typical 5.2 mm clearance 5 mm, typical 5.2 mm description the hma121x series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini- flat package. the lead pitch is 2.54 mm. applications digital logic inputs microprocessor inputs power supply monitor twisted pair line receiver telephone line receiver parameter symbol value units total package t stg -55 to +150 c storage temperature operating temperature t opr -55 to +100 c emitter i f (avg) 50 ma continuous forward current peak forward current (1 s pulse, 300 pps.) i f (pk) 1 a reverse input voltage v r 6v power dissipation p d 70 mw derate linearly (above 25c) 0.65 mw/c detector 80 ma continuous collector current power dissipation p d 150 mw derate linearly (above 25c) 2.0 mw/c collector-emitter voltage v ceo 80 v emitter-collector voltage v eco 7v absolute maximum ratings (t a = 25c unless otherwise specified) 1 2 4 3 emitter collector anode cathode 0.287 (7.29) 0.248 (6.30) 0.020 (0.51) 0.012 (0.30) 0.169 (4.29) 0.154 (3.91) 0.173 (4.40) typ 0.035 (0.89) 0.012 (0.30) 0.008 (0.20) 0.000 (0.0) 0.100 (2.54) typ 0.033 (0.85) 0.026 (0.65) 0.094 (2.39) 0.079 (2.01) pin 1 note all dimensions are in inches (millimeters) full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c package dimensions schematic ? ? 2001 fairchild semiconductor corporation ds300302 10/19/01 1 of 7 www.fairchildsemi.com
** all typicals at t a = 25 c characteristic test conditions symbol device min typ** max unit HMA121A 100 300 dc current transfer ratio (i f = 5 ma, v ce = 5 v) ctr hma121b 50 150 % hma121c 100 200 saturation voltage (i f = 8 ma, i c = 2.4 ma) v ce (sat) all 0.4 v rise time (non-saturated) (i c = 2 ma, v ce = 5 v) t r all 3 (r l = 100 1 ) ? fall time (non-saturated) (i c = 2 ma, v ce = 5 v) t f all 3 (r l = 100 1 ) transfer characteristics (t a = 25 c) characteristic test conditions symbol device min typ** max unit steady state isolation voltage (1 minute) v iso all 3750 vrms isolation characteristics electrical characteristics (t a = 25 c) parameter test conditions symbol device min typ** max unit emitter (i f = 10 ma) v f all 1.0 1.3 v forward voltage reverse current (v r = 5 v) i r all 5 a detector breakdown voltage (i c = 1 ma, i f = 0) bv ceo all 80 v collector to emitter emitter to collector (i e = 100 ?, i f = 0) bv eco all 7 collector dark current (v ce = 40 v, i f = 0) i ceo all 100 na capacitance (v ce = 0 v, f = 1 mhz) c ce all 10 pf individual component characteristics full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c www.fairchildsemi.com 2 of 7 10/19/01 ds300302
i f - forward current (ma) fig. 3 current transfer ratio vs. forward current i c / i f - current transfer ratio (%) 1 10 100 10 100 t a = 25?c v ce = 5v v ce = 10v v ce = 0.4v i f - forward current (ma) fig. 2 collector current vs. forward current 1 10 100 i c - collector current (ma) 0.1 1 10 100 t a = 25?c v ce = 5v v ce = 10v v ce = 0.4v t a - ambient temperature (?c) fig. 4 collector current vs. temperature i c - collector current (ma) -20 0 20 40 60 80 100 0.1 1 10 100 i f = 25 ma v ce = 5 v i f = 5 ma i f = 10 ma i f = 1 ma i f = 0.5 ma v ce - collector-emitter voltage (v) fig. 5 collector current vs. collector-emitter voltage i c - collector current (ma) 0246810 0 10 20 30 40 i f = 50 ma i f = 40 ma i f = 10 ma i f = 5 ma i f = 1 ma i f = 30 ma i f = 20 ma t a = 25?c v f - forward voltage (v) 0.6 0.8 1.0 1.2 1.4 1.6 i f - forward current (ma) 1 10 100 t a = 25?c fig. 1 forward current vs. forward voltage full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c typical performance curves ds300302 10/19/01 3 of 7 www.fairchildsemi.com
fig. 9 collector-emitter saturation voltage vs. temperature fig. 8 switching time vs. load resistance r l - resistance (k ?) t a - ambient temperature ( ? c) 1 10 100 switching time (s) t a - ambient temperature ( ? c) fig. 7 collector dark current vs. temperature 0 20 40 60 80 100 120 0.001 0.01 0.1 1 10 v ce = 5 v v ce = 10 v v ce = 24 v v ce = 48 v i ceo - collector dark current (a) 0.1 1 10 100 1000 t a = 25 ? c i f = 16 ma v cc = 5 v t off t s t on -40 -20 0 20 40 60 80 100 v ce (sat) - collector-emitter saturation voltage (v) 0.08 0.12 0.16 0.20 0.24 i f = 5 ma i c = 1ma i f = 40 ma i f = 30 ma i f = 20 ma i f = 10 ma i f = 5 ma i f = 2 ma i f = 1 ma v ce - collector-emitter voltage (v) fig. 6 collector current vs. collector-emitter voltage i c - collector current (ma) 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 t a = 25 ? c i f = 50 ma i f = 0.5 ma full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c www.fairchildsemi.com 4 of 7 10/19/01 ds300302
full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c r1 tape and reel (500 units) r2 tape and reel (2500 units) d d w k t d 1 0 p p a p 0 b 0 0 2 e f w 1 0 r1 reel diame ter r2 devices per reel max. compon ent rotation o r tilt cover ta pe thickness cover tape width poc ket hole dia. pocket dime nsion pocket location sprocket hole location sprocket hole dia. sprocke t ho le pitch tape th ickn ess pocke t pitc h tape wid th symbo l de scription r1 r2 b d w 1 d k 0 1 0 e a p 0 p f 2 d p 0 0 t w 178 mm (7") 330 mm (13") dime nsions (mm) 12.00 0.4 7.30 0.20 20 ? ma x 5 00 1.55 0.20 2 .30 0 .20 0.065 0.02 9 .2 0 1.75 0.20 8.00 0.2 0 2.00 0.20 5 .50 0 .20 4.40 0.20 1.55 0.20 4.00 0.20 0.30 0.20 2 .54 pitch 2500 ordering information option description ds300302 10/19/01 5 of 7 www.fairchildsemi.com
full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c 0.024 (0.61) 0.100 (2.54) 0.060 (1.52) 0.310 (7.87) 0.190 (4.83) footprint drawing for pcb layout peak reflow temperature: 230 c (package surface temperature) for 30 seconds time of temperature higher than 210 c: 60 seconds or less one time soldering reflow is recommended (heating) to 30 s to 60 s 90 s time (s) package surface temperature t ( c) 150 s 60 s 180 c 230 c (peak temperature) 210 c recommended infrared reflow soldering profile www.fairchildsemi.com 6 of 7 10/19/01 ds300302
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described here- in; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. full pitch mini-flat package 4-pin optocouplers HMA121A hma121b hma121c ds300302 10/19/01 7 of 7 www.fairchildsemi.com
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